US 11,901,872 B2
Thin film bulk acoustic resonator and manufacturing process therefor
Linping Li, Zhejiang (CN); Jinghao Sheng, Zhejiang (CN); and Zhou Jiang, Zhejiang (CN)
Assigned to JWL (ZHEJIANG) SEMICONDUCTOR CO., LTD., (CN)
Appl. No. 18/007,994
Filed by JWL (ZHEJIANG) SEMICONDUCTOR CO., LTD., Zhejiang (CN)
PCT Filed Jun. 28, 2020, PCT No. PCT/CN2020/098557
§ 371(c)(1), (2) Date Dec. 2, 2022,
PCT Pub. No. WO2021/248572, PCT Pub. Date Dec. 16, 2021.
Claims priority of application No. 202010526851.5 (CN), filed on Jun. 9, 2020.
Prior Publication US 2023/0208383 A1, Jun. 29, 2023
Int. Cl. H03H 9/02 (2006.01); H03H 3/02 (2006.01); H03H 9/13 (2006.01); H03H 9/17 (2006.01); H03H 9/54 (2006.01)
CPC H03H 9/02125 (2013.01) [H03H 3/02 (2013.01); H03H 9/133 (2013.01); H03H 9/173 (2013.01); H03H 9/54 (2013.01); H03H 2003/021 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A thin film bulk acoustic wave resonator, comprising:
a bottom electrode layer, a piezoelectric layer, and a top electrode layer, which form a stack covering an acoustic reflection structure located at a surface of a substrate, wherein:
a portion of the piezoelectric layer and is depolarized to form a depolarized portion of which piezoelectricity is eliminated; and
along a direction perpendicular to the substrate, a projection of a part of the depolarized portion on the substrate is:
located outside of a projection of the acoustic reflection structure on the substrate,
located inside of a projection of the top electrode layer on the substrate, and
located inside of a projection of the bottom electrode layer on the substrate.