US 11,901,698 B2
Negative bias to improve phase noise
Selina Farwell, Northamptonshire (GB); Robert Griffin, Northamptonshire (GB); and Samuel Davies, Northamptonshire (GB)
Assigned to Lumentum Technology UK Limited, Northamptonshire (GB)
Appl. No. 16/957,654
Filed by Lumentum Technology UK Limited, Towcester (GB)
PCT Filed Dec. 21, 2018, PCT No. PCT/GB2018/053768
§ 371(c)(1), (2) Date Jun. 24, 2020,
PCT Pub. No. WO2019/130021, PCT Pub. Date Jul. 4, 2019.
Claims priority of application No. 1722292 (GB), filed on Dec. 29, 2017.
Prior Publication US 2023/0208100 A1, Jun. 29, 2023
Int. Cl. H01S 5/00 (2006.01); H01S 5/062 (2006.01); H01S 5/026 (2006.01); H01S 5/042 (2006.01); H01S 5/0625 (2006.01); H01S 5/068 (2006.01); H01S 5/12 (2021.01); G02F 1/025 (2006.01)
CPC H01S 5/06246 (2013.01) [H01S 5/0261 (2013.01); H01S 5/042 (2013.01); H01S 5/062 (2013.01); H01S 5/0625 (2013.01); H01S 5/06258 (2013.01); H01S 5/06817 (2013.01); H01S 5/124 (2013.01); G02F 1/025 (2013.01); H01S 5/026 (2013.01); H01S 5/0265 (2013.01); H01S 5/12 (2013.01); H01S 2301/02 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A method of operating an optoelectronic device comprising an optical waveguide section that includes a semiconductor core, the method comprising:
determining, based on Franz-Keldysh effect, Free carrier plasma effect, and Inter-valence band absorption, a range for a negative bias voltage for the optical waveguide section for which an optical loss of the semiconductor core is lower than an optical loss at zero bias for an operating wavelength range of the optoelectronic device;
selecting a bias voltage within the operating wavelength range; and
applying the bias voltage to the optical waveguide section.