US 11,901,480 B2
Method of manufacturing a light-emitting device
Chien-Fu Huang, Hsinchu (TW); Chih-Chiang Lu, Hsinchu (TW); Chun-Yu Lin, Hsinchu (TW); and Hsin-Chih Chiu, Hsinchu (TW)
Assigned to EPISTAR CORPORATION, Hsinchu (TW)
Filed by EPISTAR CORPORATION, Hsinchu (TW)
Filed on Aug. 9, 2021, as Appl. No. 17/397,388.
Application 17/397,388 is a division of application No. 16/883,742, filed on May 26, 2020, granted, now 11,088,298, issued on Aug. 10, 2021.
Application 16/883,742 is a continuation of application No. 16/436,544, filed on Jun. 10, 2019, granted, now 10,680,133, issued on Jun. 9, 2020.
Application 16/436,544 is a continuation of application No. 15/944,459, filed on Apr. 3, 2018, granted, now 10,319,877, issued on Jun. 11, 2019.
Application 15/944,459 is a continuation of application No. 15/609,795, filed on May 31, 2017, abandoned.
Application 15/609,795 is a continuation of application No. 14/901,415, granted, now 9,705,029, issued on Jul. 11, 2017, previously published as PCT/CN2013/078051, filed on Jun. 26, 2013.
Prior Publication US 2021/0367098 A1, Nov. 25, 2021
Int. Cl. H01L 33/02 (2010.01); H01L 33/62 (2010.01); H01L 25/075 (2006.01); H01L 21/66 (2006.01); H01L 23/00 (2006.01); H01L 33/36 (2010.01)
CPC H01L 33/02 (2013.01) [H01L 22/12 (2013.01); H01L 22/14 (2013.01); H01L 24/24 (2013.01); H01L 25/0753 (2013.01); H01L 33/62 (2013.01); H01L 33/36 (2013.01); H01L 2924/0002 (2013.01); H01L 2933/0033 (2013.01); H01L 2933/0066 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A method of manufacturing a light-emitting device, comprising:
providing a growth substrate;
forming a first plurality of blocks of semiconductor stack and a second plurality of blocks of semiconductor stack on the growth substrate, wherein the first plurality of blocks of semiconductor stack comprises a first block of semiconductor stack, the second plurality of blocks of semiconductor stack comprises a second block of semiconductor stack, and the first block of semiconductor stack and the second block of semiconductor stack are not adjacent to each other;
providing a substrate comprising a first surface and a second surface; and
bonding the first block of semiconductor stack and the second block of semiconductor stack to the substrate in a configuration that the first block of semiconductor stack and the second block of semiconductor stack are located adjacent to each other,
wherein the first block of semiconductor stack and the second block of semiconductor stack are configured to emit same color lights,
wherein a difference between a first dominant wavelength of the first block of semiconductor stack and a second dominant wavelength of the second block of semiconductor stack is greater than or equal to 1 nm, and
wherein the first block of semiconductor stack comprises a first average dominant wavelength, the second block of semiconductor stack comprises a second average dominant wavelength, and a difference between the first average dominant wavelength and the second average dominant wavelength is larger than the difference of a first dominant wavelength of the first block of semiconductor stack and a second dominant wavelength of the second block of semiconductor stack.