US 11,901,479 B2
Semiconductor structure, display panel and manufacturing method of electronic element module
Bo-Wei Wu, MiaoLi County (TW); Yu-Yun Lo, MiaoLi County (TW); Chien-Chen Kuo, MiaoLi County (TW); Chang-Feng Tsai, MiaoLi County (TW); and Tzu-Yang Lin, MiaoLi County (TW)
Assigned to PlayNitride Display Co., Ltd., MiaoLi County (TW)
Filed by PlayNitride Display Co., Ltd., MiaoLi County (TW)
Filed on May 19, 2021, as Appl. No. 17/325,179.
Claims priority of application No. 110100212 (TW), filed on Jan. 5, 2021.
Prior Publication US 2022/0216365 A1, Jul. 7, 2022
Int. Cl. H01L 33/00 (2010.01); H01L 25/075 (2006.01); H01L 21/66 (2006.01); H01L 21/683 (2006.01); H01L 33/62 (2010.01); G09G 3/32 (2016.01)
CPC H01L 33/0095 (2013.01) [H01L 21/6835 (2013.01); H01L 22/22 (2013.01); H01L 25/0753 (2013.01); H01L 33/62 (2013.01); G09G 3/32 (2013.01); H01L 2221/68354 (2013.01); H01L 2221/68368 (2013.01); H01L 2933/0066 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a temporary substrate;
a plurality of first micro-light-emitting diodes; and
at least one second micro-light-emitting diode,
wherein the first micro-light-emitting diodes and the at least one second micro-light-emitting diode are distributed on the temporary substrate, the first micro-light-emitting diodes and the at least one second micro-light-emitting diode comprise same properties, and at least one of an appearance difference, a height difference, and an orientation difference exists between the first micro-light-emitting diodes and the at least one second micro-light-emitting diode,
wherein the first micro-light-emitting diodes and the at least one second micro-light-emitting diode comprising a same light-emission color, and at least one of a light-emission wavelength difference and a luminous-intensity difference exists between the first micro-light-emitting diodes and the at least one second micro-light-emitting diode.