CPC H01L 33/0095 (2013.01) [H01L 21/6835 (2013.01); H01L 22/22 (2013.01); H01L 25/0753 (2013.01); H01L 33/62 (2013.01); G09G 3/32 (2013.01); H01L 2221/68354 (2013.01); H01L 2221/68368 (2013.01); H01L 2933/0066 (2013.01)] | 12 Claims |
1. A semiconductor structure, comprising:
a temporary substrate;
a plurality of first micro-light-emitting diodes; and
at least one second micro-light-emitting diode,
wherein the first micro-light-emitting diodes and the at least one second micro-light-emitting diode are distributed on the temporary substrate, the first micro-light-emitting diodes and the at least one second micro-light-emitting diode comprise same properties, and at least one of an appearance difference, a height difference, and an orientation difference exists between the first micro-light-emitting diodes and the at least one second micro-light-emitting diode,
wherein the first micro-light-emitting diodes and the at least one second micro-light-emitting diode comprising a same light-emission color, and at least one of a light-emission wavelength difference and a luminous-intensity difference exists between the first micro-light-emitting diodes and the at least one second micro-light-emitting diode.
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