US 11,901,463 B2
Method of making decoupling capacitor
Szu-Lin Liu, Hsinchu (TW); and Jaw-Juinn Horng, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jun. 27, 2022, as Appl. No. 17/850,636.
Application 17/850,636 is a division of application No. 16/573,725, filed on Sep. 17, 2019, granted, now 11,515,434.
Prior Publication US 2022/0336683 A1, Oct. 20, 2022
Int. Cl. H01L 21/265 (2006.01); H01L 29/66 (2006.01); H01L 29/93 (2006.01); H01L 27/08 (2006.01); H01L 29/94 (2006.01); H01L 29/06 (2006.01)
CPC H01L 29/94 (2013.01) [H01L 29/0607 (2013.01); H01L 29/66181 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
implanting a first dopant having a first dopant type into a substrate to define a plurality of source/drain (S/D) regions;
implanting a second dopant having the first dopant type into the substrate to define a channel region between adjacent S/D regions of the plurality of S/D regions, wherein a dopant concentration of the second dopant in the channel region is less than half of a dopant concentration of the first dopant in each of the plurality of S/D regions;
forming a gate stack over the channel region; and
electrically coupling each of the plurality of S/D regions together.
 
4. A method comprising:
implanting a first dopant into a substrate to form a plurality of source/drain (S/D) regions in the substrate;
electrically coupling each of the plurality of S/D regions together;
implanting a second dopant into the substrate to define a channel region, wherein the channel region is between adjacent S/D regions of the plurality of S/D regions, wherein the second dopant and the first dopant are p-type, and a concentration of the second dopant in the channel region is less than a concentration of the first dopant in each of the plurality of S/D regions;
forming a gate stack over the channel region; and
forming an n-well in the substrate, wherein the n-well extends under the channel region and the adjacent S/D regions of the plurality of S/D regions.