US 11,901,461 B2
Thin film transistor comprising oxide semiconductor layer and silicon semiconductor layer and display apparatus comprising the same
Jaeman Jang, Paju-si (KR); PilSang Yun, Paju-si (KR); Jiyong Noh, Paju-si (KR); and InTak Cho, Paju-si (KR)
Assigned to LG Display Co., Ltd., Seoul (KR)
Filed by LG Display Co., Ltd., Seoul (KR)
Filed on Sep. 30, 2022, as Appl. No. 17/958,167.
Application 17/958,167 is a continuation of application No. 17/121,248, filed on Dec. 14, 2020, granted, now 11,495,692.
Claims priority of application No. 10-2019-0175593 (KR), filed on Dec. 26, 2019.
Prior Publication US 2023/0018306 A1, Jan. 19, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/786 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/78693 (2013.01) [H01L 29/6675 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A thin film transistor comprising:
an active layer; and
a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer,
wherein the active layer includes:
a silicon semiconductor layer; and
an oxide semiconductor layer which contacts the silicon semiconductor layer,
wherein at least a portion of the silicon semiconductor layer and at least a portion of the oxide semiconductor layer are overlapped with the gate electrode, and
wherein the silicon semiconductor and the oxide semiconductor layer are not overlapped with each other in a thickness direction.