US 11,901,450 B2
Ferroelectric structure for semiconductor devices
Cheng-Ming Lin, Kaohsiung (TW); Sai-Hooi Yeong, Zhubei (TW); Ziwei Fang, Hsinchu (TW); Bo-Feng Young, Taipei (TW); Chi On Chui, Hsinchu (TW); Chih-Yu Chang, NewTaipei (TW); and Huang-Lin Chao, Hillsboro, OR (US)
Assigned to Taiwan Semicondutor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jun. 29, 2021, as Appl. No. 17/362,317.
Application 17/362,317 is a continuation of application No. 16/515,898, filed on Jul. 18, 2019, granted, now 11,069,807.
Prior Publication US 2021/0328065 A1, Oct. 21, 2021
Int. Cl. H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/51 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01)
CPC H01L 29/78391 (2014.09) [H01L 21/0234 (2013.01); H01L 21/02181 (2013.01); H01L 21/02356 (2013.01); H01L 29/40111 (2019.08); H01L 29/516 (2013.01); H01L 29/6684 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a pair of opposing spacers on a fin;
depositing an amorphous dielectric layer in an opening between the pair of opposing spacers, comprising:
depositing a first portion of the amorphous dielectric layer on the fin; and
depositing a second portion of the amorphous dielectric layer on sidewalls of the pair of opposing spacers; and
performing a plasma treatment on the amorphous dielectric layer, wherein the plasma treatment converts the first portion of the amorphous dielectric layer into a crystalline dielectric layer without converting the second portion of the amorphous dielectric layer.