US 11,901,448 B2
High voltage isolation devices for semiconductor devices
Michael A. Smith, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Aug. 11, 2022, as Appl. No. 17/886,436.
Application 17/886,436 is a continuation of application No. 17/095,475, filed on Nov. 11, 2020, granted, now 11,430,887.
Prior Publication US 2022/0384645 A1, Dec. 1, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/78 (2006.01); H01L 29/10 (2006.01)
CPC H01L 29/7831 (2013.01) [H01L 29/1033 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
an active area having a column of bit line contacts;
a plurality of first active channels connected to the active area, each first active channel aligned with a corresponding bit line contact; and
a plurality of second active channels spaced away from the active area,
wherein the first and second active channels are interdigitated such that individual first active channels alternate with individual second active channels.