US 11,901,440 B2
Sacrificial fin for self-aligned contact rail formation
Yann Mignot, Slingerlands, NY (US); Christopher J. Waskiewicz, Rexford, NY (US); Su Chen Fan, Cohoes, NY (US); Brent Anderson, Jericho, VT (US); and Junli Wang, Slingerlands, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Sep. 2, 2021, as Appl. No. 17/465,316.
Prior Publication US 2023/0064608 A1, Mar. 2, 2023
Int. Cl. H01L 29/66 (2006.01); H01L 23/48 (2006.01); H01L 21/8234 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01)
CPC H01L 29/66795 (2013.01) [H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 23/481 (2013.01); H01L 29/0847 (2013.01); H01L 29/7851 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a functional gate structure including a first source/drain region located a first end of a semiconductor channel material structure and a second source/drain region located at a second end of the semiconductor channel material structure; and
a contact rail located laterally adjacent to the functional gate structure and contacting a surface of the first source/drain region of the functional gate structure, wherein the contact rail has a lower portion having a first critical dimension and an upper portion having a second critical dimension that is greater than the first critical dimension, wherein the first critical dimension is 25 nm or less.