US 11,901,439 B2
Semiconductor device and method
Wen-Kai Lin, Yilan County (TW); Che-Hao Chang, Hsinchu (TW); Chi On Chui, Hsinchu (TW); and Yung-Cheng Lu, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 27, 2022, as Appl. No. 17/815,527.
Application 17/815,527 is a continuation of application No. 16/940,226, filed on Jul. 27, 2020, granted, now 11,444,177.
Claims priority of provisional application 62/967,933, filed on Jan. 30, 2020.
Prior Publication US 2022/0376088 A1, Nov. 24, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 21/8238 (2006.01)
CPC H01L 29/6656 (2013.01) [H01L 21/823431 (2013.01); H01L 21/823821 (2013.01); H01L 27/0886 (2013.01); H01L 29/42392 (2013.01); H01L 29/6653 (2013.01); H01L 29/66553 (2013.01); H01L 29/78696 (2013.01); H01L 21/823468 (2013.01)] 20 Claims
OG exemplary drawing
 
8. A semiconductor device comprising:
a semiconductor substrate;
a channel region on the semiconductor substrate;
a gate structure on the channel region;
a source/drain region adjacent the gate structure; and
an inner spacer adjacent the channel region, wherein the inner spacer is between the source/drain region and the gate structure, wherein the inner spacer comprises:
a first inner spacer layer contacting the gate structure and the source/drain region;
a second inner spacer layer contacting the first inner spacer layer and the source/drain region; and
a third inner spacer layer contacting the second inner spacer layer and the source/drain region, wherein a first sidewall of the inner spacer adjacent the source/drain region is W-shaped in a cross-sectional view, wherein a second sidewall of the inner spacer adjacent the gate structure is U-shaped in the cross-sectional view, wherein the first inner spacer layer, the second inner spacer layer, and the third inner spacer layer comprise carbon, and wherein a first atomic percentage of carbon in the first inner spacer layer is greater than a second atomic percentage of carbon in the second inner spacer layer and a third atomic percentage of carbon in the third inner spacer layer.