US 11,901,438 B2
Nanosheet transistor
Kangguo Cheng, Schenectady, NY (US); Juntao Li, Cohoes, NY (US); Heng Wu, Guilderland, NY (US); and Peng Xu, Guilderland, NY (US)
Assigned to Adeia Semiconductor Solutions LLC, San Jose, CA (US)
Filed by Adeia Semiconductor Solutions LLC, San Jose, CA (US)
Filed on May 24, 2021, as Appl. No. 17/328,674.
Application 17/328,674 is a continuation of application No. 16/939,415, filed on Jul. 27, 2020, granted, now 11,049,953.
Application 16/939,415 is a continuation of application No. 16/252,663, filed on Jan. 20, 2019, granted, now 10,727,315, issued on Jul. 28, 2020.
Application 16/252,663 is a continuation of application No. 15/814,376, filed on Nov. 15, 2017, granted, now 10,243,061, issued on Mar. 26, 2019.
Prior Publication US 2021/0280688 A1, Sep. 9, 2021
Int. Cl. H01L 29/00 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01); H01L 21/311 (2006.01); H01L 29/423 (2006.01); H01L 23/31 (2006.01); H01L 23/29 (2006.01); H01L 21/02 (2006.01); H01L 29/786 (2006.01); H01L 29/775 (2006.01); B82Y 10/00 (2011.01)
CPC H01L 29/6656 (2013.01) [B82Y 10/00 (2013.01); H01L 21/02164 (2013.01); H01L 21/02236 (2013.01); H01L 21/31116 (2013.01); H01L 23/291 (2013.01); H01L 23/3171 (2013.01); H01L 29/0653 (2013.01); H01L 29/0673 (2013.01); H01L 29/401 (2013.01); H01L 29/42392 (2013.01); H01L 29/6681 (2013.01); H01L 29/66553 (2013.01); H01L 29/775 (2013.01); H01L 29/7853 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor nanosheet device comprising:
epitaxial source-drain regions on opposite sides of a gate stack;
a vertical stack of nanosheets each extending in a horizontal direction between the epitaxial source-drain regions, and each comprising end portions in contact with the epitaxial source-drain regions and a center portion that extends between the end portions;
the gate stack surrounding each of the center portions; and
pairs of inner spacers on opposite sides of the gate stack, each pair separating a portion of the gate stack from the epitaxial source-drain regions, wherein:
a middle portion of each nanosheet is wider in the horizontal direction than a top portion and a bottom portion of the respective nanosheet.