US 11,901,437 B2
Semiconductor device and method for fabricating the same
Te-Chang Hsu, Tainan (TW); Chun-Chia Chen, Tainan (TW); and Yao-Jhan Wang, Tainan (TW)
Assigned to Marlin Semiconductor Limited, Dublin (IE)
Filed by Marlin Semiconductor Limited, Dublin (IE)
Filed on May 15, 2022, as Appl. No. 17/744,722.
Application 16/239,470 is a division of application No. 15/790,043, filed on Oct. 22, 2017, granted, now 10,211,314, issued on Feb. 19, 2019.
Application 17/744,722 is a continuation of application No. 16/836,872, filed on Mar. 31, 2020, granted, now 11,355,619.
Application 16/836,872 is a continuation of application No. 16/239,470, filed on Jan. 3, 2019, granted, now 10,651,290, issued on May 12, 2020.
Claims priority of application No. 201710865297.1 (CN), filed on Sep. 22, 2017.
Prior Publication US 2022/0278225 A1, Sep. 1, 2022
Int. Cl. H01L 29/66 (2006.01); H01L 21/3105 (2006.01); H01L 21/3115 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 29/417 (2006.01); H01L 29/51 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/66545 (2013.01) [H01L 21/02326 (2013.01); H01L 21/02337 (2013.01); H01L 21/02348 (2013.01); H01L 21/3115 (2013.01); H01L 21/31053 (2013.01); H01L 21/76826 (2013.01); H01L 21/76828 (2013.01); H01L 21/76834 (2013.01); H01L 29/6656 (2013.01); H01L 29/66575 (2013.01); H01L 29/66795 (2013.01); H01L 21/76825 (2013.01); H01L 29/41791 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/785 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a gate structure on a substrate;
a spacer adjacent to and in direct contact with the gate structure, wherein the spacer comprises only a single layer, a dielectric constant of the spacer proximate to the gate structure is higher than a dielectric constant of the spacer away from the gate structure; and
a source/drain region adjacent to two sides of the spacer.