US 11,901,433 B2
Semiconductor device
Jheng-Sheng You, Hsinchu County (TW); Hsin-Chih Lin, Hsinchu (TW); Kun-Ming Huang, Taipei (TW); Lieh-Chuan Chen, Hsinchu (TW); Po-Tao Chu, New Taipei (TW); Shen-Ping Wang, Keelung (TW); and Chien-Li Kuo, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Aug. 24, 2021, as Appl. No. 17/410,648.
Application 15/947,356 is a division of application No. 14/839,931, filed on Aug. 29, 2015, granted, now 9,941,384, issued on Apr. 10, 2018.
Application 17/410,648 is a continuation of application No. 16/901,555, filed on Jun. 15, 2020, granted, now 11,374,107.
Application 16/901,555 is a continuation of application No. 16/195,683, filed on Nov. 19, 2018, granted, now 10,686,054, issued on Jun. 16, 2020.
Application 16/195,683 is a continuation of application No. 15/947,356, filed on Apr. 6, 2018, granted, now 10,134,867, issued on Nov. 20, 2018.
Prior Publication US 2021/0384319 A1, Dec. 9, 2021
Int. Cl. H01L 29/66 (2006.01); H01L 29/45 (2006.01); H01L 29/778 (2006.01); H01L 29/417 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01)
CPC H01L 29/66462 (2013.01) [H01L 29/452 (2013.01); H01L 29/7786 (2013.01); H01L 29/1066 (2013.01); H01L 29/402 (2013.01); H01L 29/41758 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
a first III-V compound layer;
a second III-V compound layer over the first III-V compound layer;
a dielectric layer over the second III-V compound layer;
a source/drain contact extending through the dielectric layer to the second III-V compound layer, wherein the source/drain contact is in contact with a top surface of the dielectric layer and an inner sidewall of the dielectric layer;
a metal-containing layer over and in contact with the source/drain contact and a portion of the metal-containing layer is directly above the dielectric layer; and
a metal contact over and in contact with the metal-containing layer, wherein a bottommost surface of the metal-containing layer is wider than a bottommost surface of the metal contact and a pate field plate between a pate structure and the source/drain contact.