US 11,901,424 B2
Semiconductor device
Shih-Cheng Chen, New Taipei (TW); Chun-Hsiung Lin, Hsinchu County (TW); and Chih-Hao Wang, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Jun. 29, 2022, as Appl. No. 17/853,709.
Application 17/853,709 is a division of application No. 16/886,572, filed on May 28, 2020, granted, now 11,380,768.
Prior Publication US 2022/0336601 A1, Oct. 20, 2022
Int. Cl. H01L 29/417 (2006.01); H01L 21/762 (2006.01); H01L 21/764 (2006.01); H01L 21/768 (2006.01); H01L 29/40 (2006.01); H01L 21/8238 (2006.01); H01L 23/522 (2006.01)
CPC H01L 29/41791 (2013.01) [H01L 21/764 (2013.01); H01L 21/7682 (2013.01); H01L 21/76232 (2013.01); H01L 21/76843 (2013.01); H01L 21/823821 (2013.01); H01L 21/823871 (2013.01); H01L 21/823878 (2013.01); H01L 23/5226 (2013.01); H01L 29/401 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
an active region;
a gate structure across the active region and extending in a first direction;
a source/drain epitaxial structure over the active region and adjacent the gate structure;
an epitaxial layer over the source/drain epitaxial structure, wherein a maximal width of the epitaxial layer is less than a maximal width of the source/drain epitaxial structure in the first direction;
a metal alloy layer over the epitaxial layer;
a contact over the metal alloy layer; and
a contact etch stop layer lining sidewalls of the source/drain epitaxial structure, wherein the metal alloy layer is spaced apart from the contact etch stop layer.