US 11,901,420 B2
Manufacturing method for gate electrode and thin film transistor and display panel
En-Tsung Cho, Beihai (CN); Yuming Xia, Beihai (CN); and Wei Li, Beihai (CN)
Assigned to BEIHAI HKC OPTOELECTRONICS TECHNOLOGY CO., LTD., Beihai (CN); and HKC CORPORATION LIMITED, Shenzhen (CN)
Filed by Beihai HKC Optoelectronics Technology Co., Ltd., Beihai (CN); and HKC CORPORATION LIMITED, Shenzhen (CN)
Filed on Jul. 22, 2021, as Appl. No. 17/383,394.
Claims priority of application No. 202010752766.0 (CN), filed on Jul. 30, 2020.
Prior Publication US 2022/0037476 A1, Feb. 3, 2022
Int. Cl. G02F 1/1343 (2006.01); G02F 1/1368 (2006.01); H01L 29/40 (2006.01); C23C 14/14 (2006.01); C23C 14/35 (2006.01); C23C 14/58 (2006.01); C23C 16/14 (2006.01); C23C 16/16 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01); C23C 28/02 (2006.01); H01L 27/12 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01)
CPC H01L 29/401 (2013.01) [C23C 14/14 (2013.01); C23C 14/35 (2013.01); C23C 14/5873 (2013.01); C23C 16/14 (2013.01); C23C 16/16 (2013.01); C23C 16/45527 (2013.01); C23C 16/45553 (2013.01); C23C 16/56 (2013.01); C23C 28/023 (2013.01); H01L 27/1214 (2013.01); H01L 29/42384 (2013.01); H01L 29/4908 (2013.01); G02F 1/1368 (2013.01); G02F 1/13439 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A manufacturing method for a gate electrode, comprising:
depositing an aluminum film on a substratum by physical vapor deposition;
depositing a molybdenum film over the aluminum film by atomic layer deposition; and
etching the aluminum film and the molybdenum film to form the gate electrode of a predetermined pattern;
wherein depositing the molybdenum film over the aluminum film by atomic layer deposition comprises:
A: placing the substratum with the aluminum film in a reaction chamber of an atomic layer deposition apparatus;
B: continuously introducing a molybdenum precursor for a preset time period into the atomic layer deposition apparatus, remaining the molybdenum precursor for a preset time period after the introduction, and introducing an inert gas for purging;
C: continuously introducing a reducing gas for a preset time into the atomic layer deposition apparatus, remaining the reducing gas for a preset time period after the introduction, and introducing the inert gas for purging; and
D: repeating the above operations B and C for a preset number of times to form the molybdenum film.