US 11,901,416 B2
Semiconductor device
Tetsujiro Tsunoda, Tokyo (JP)
Assigned to Mitsubishi Electric Corporation, Tokyo (JP)
Appl. No. 17/418,511
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
PCT Filed Apr. 10, 2019, PCT No. PCT/JP2019/015600
§ 371(c)(1), (2) Date Jun. 25, 2021,
PCT Pub. No. WO2020/208738, PCT Pub. Date Oct. 15, 2020.
Prior Publication US 2022/0069086 A1, Mar. 3, 2022
Int. Cl. H01L 29/10 (2006.01); H01L 29/32 (2006.01); H01L 29/739 (2006.01)
CPC H01L 29/1095 (2013.01) [H01L 29/32 (2013.01); H01L 29/7397 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor substrate of first conductivity type;
a first IGBT portion selectively disposed on a first main surface of the semiconductor substrate;
a second IGBT portion disposed on the first main surface of the semiconductor substrate, spaced from the first IGBT portion, and used for detection of a current passing through the first IGBT portion; and
an impurity region of second conductivity type selectively disposed on a second main surface opposite to the first main surface of the semiconductor substrate, wherein
an area ratio of the impurity region within a second range to an area of the second range is lower than an area ratio of the impurity region within a first range to an area of the first range, the second range corresponding to the second IGBT portion on the second main surface, the first range corresponding to the first IGBT portion on the second main surface.