US 11,901,409 B2
Semiconductor device and method of manufacturing the same
Pei-Yu Chou, Hsinchu County (TW); and Tze-Liang Lee, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Jul. 23, 2021, as Appl. No. 17/383,828.
Prior Publication US 2023/0022101 A1, Jan. 26, 2023
Int. Cl. H01L 29/94 (2006.01); H01L 29/76 (2006.01); H01L 29/06 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01)
CPC H01L 29/0649 (2013.01) [H01L 21/823481 (2013.01); H01L 29/0843 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a gate structure disposed on the substrate;
a conductive layer disposed on the gate structure and electrically connected to the gate structure; and
a dielectric structure disposed on the gate structure, wherein the dielectric structure comprises a first dielectric layer and an air gap spaced apart from the conductive layer by the first dielectric layer, and the first dielectric layer has a lateral surface defining a recess tapered toward the substrate, and the lateral surface of the first dielectric layer is exposed to the air gap.