US 11,901,393 B2
Image sensor and manufacturing method thereof
Jhy-Jyi Sze, Hsin-Chu (TW); Sin-Yi Jiang, Hsinchu (TW); Yi-Shin Chu, Hsinchu (TW); Yin-Kai Liao, Taipei (TW); Hsiang-Lin Chen, Hsinchu (TW); Kuan-Chieh Huang, Hsinchu (TW); and Jung-I Lin, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Feb. 25, 2021, as Appl. No. 17/184,965.
Prior Publication US 2022/0271080 A1, Aug. 25, 2022
Int. Cl. H01L 27/146 (2006.01); G01S 7/481 (2006.01)
CPC H01L 27/14649 (2013.01) [H01L 27/1463 (2013.01); H01L 27/14623 (2013.01); H01L 27/14625 (2013.01); H01L 27/14636 (2013.01); H01L 27/14689 (2013.01); H01L 27/14698 (2013.01); G01S 7/4816 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a substrate comprising a first material, wherein the first material generates electrical signals from radiation within a first range of wavelengths;
an image sensor element comprising a second material, wherein the second material generates electrical signals from radiation within a second range of wavelengths, the second range is different from first range;
a first heavily doped region laterally surrounding the image sensor element;
a transparent layer proximal to a light receiving surface of the image sensor element, wherein the transparent layer is transparent to radiation within the second range of wavelength; and
an interconnect structure connected to a signal transmitting surface of the image sensor element.