US 11,901,387 B2
Image sensor
Min-Feng Kao, Chiayi (TW); Dun-Nian Yaung, Taipei (TW); Jen-Cheng Liu, Hsin-Chu (TW); Wen-Chang Kuo, Tainan (TW); Sheng-Chau Chen, Tainan (TW); Feng-Chi Hung, Hsin-Chu County (TW); and Sheng-Chan Li, Tainan Clty (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 7, 2021, as Appl. No. 17/369,567.
Claims priority of provisional application 63/154,113, filed on Feb. 26, 2021.
Prior Publication US 2022/0278144 A1, Sep. 1, 2022
Int. Cl. H01L 27/146 (2006.01); H01L 21/762 (2006.01)
CPC H01L 27/1463 (2013.01) [H01L 21/76224 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14683 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor layer comprising a first surface and a second surface opposing the first surface;
a plurality of dielectric isolation features disposed within the semiconductor layer and adjacent the first surface of the semiconductor layer;
a plurality of metal isolation features extending from the second surface of the semiconductor layer;
a metal grid disposed directly over and in contact with the plurality of metal isolation features;
a plurality of microlens features disposed over the metal grid; and
a first dielectric layer extending continuously along the second surface of the semiconductor layer, between the semiconductor layer and the plurality of metal isolation features, and between each of the plurality of metal isolation features and one of the plurality of dielectric isolation features.