US 11,901,364 B2
Semiconductor device structure and methods of forming the same
Jung-Hung Chang, Changhua (TW); Zhi-Chang Lin, Hsinchu (TW); Shih-Cheng Chen, New Taipei (TW); Chien Ning Yao, Hsinchu (TW); Kuo-Cheng Chiang, Hsinchu (TW); and Chih-Hao Wang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTORMANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Aug. 27, 2021, as Appl. No. 17/459,101.
Prior Publication US 2023/0064705 A1, Mar. 2, 2023
Int. Cl. H01L 27/12 (2006.01); H01L 21/822 (2006.01); H01L 21/8234 (2006.01)
CPC H01L 27/1207 (2013.01) [H01L 21/8221 (2013.01); H01L 21/823412 (2013.01); H01L 21/823418 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device structure, comprising:
a first plurality of semiconductor layers disposed at a first location of the semiconductor device structure, wherein the first plurality of semiconductor layers comprises a first group of semiconductor layers, a second group of semiconductor layers disposed over and aligned with the first group of semiconductor layers, and a third group of semiconductor layers disposed over and aligned with the second group of semiconductor layers;
a first source/drain epitaxial feature in contact with a first number of semiconductor layers of the first group of semiconductor layers, wherein the first source/drain epitaxial feature has a first height;
a first dielectric material disposed over the first source/drain epitaxial feature;
a second source/drain epitaxial feature in contact with a second number of semiconductor layers of the third group of semiconductor layers, wherein the second source/drain epitaxial feature is disposed over the first dielectric material;
a second plurality of semiconductor layers disposed at a second location of the semiconductor device structure, wherein the second plurality of semiconductor layers comprises a fourth group of semiconductor layers, a fifth group of semiconductor layers disposed over and aligned with the fourth group of semiconductor layers, and a sixth group of semiconductor layers disposed over and aligned with the fifth group of semiconductor layers;
a third source/drain epitaxial feature in contact with a third number of semiconductor layers of the fourth group of semiconductor layers, wherein the third source/drain epitaxial feature has a second height different from the first height;
a second dielectric material disposed over the third source/drain epitaxial feature; and
a fourth source/drain epitaxial feature in contact with a fourth number of semiconductor layers of the sixth group of semiconductor layers, wherein the fourth source/drain epitaxial feature is disposed over the second dielectric material.