US 11,901,359 B2
Method of manufacturing a semiconductor device
Seung Soo Hong, Suwon-si (KR); Jeong Yun Lee, Suwon-si (KR); Geum Jung Seong, Suwon-si (KR); Jin Won Lee, Suwon-si (KR); and Hyun Ho Jung, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD, Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Nov. 8, 2021, as Appl. No. 17/521,011.
Application 17/521,011 is a continuation of application No. 16/739,357, filed on Jan. 10, 2020, granted, now 11,189,615.
Claims priority of application No. 10-2019-0043851 (KR), filed on Apr. 15, 2019.
Prior Publication US 2022/0059532 A1, Feb. 24, 2022
Int. Cl. H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 27/02 (2006.01); H01L 29/66 (2006.01); H10B 10/00 (2023.01)
CPC H01L 27/0886 (2013.01) [H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823475 (2013.01); H01L 21/823481 (2013.01); H01L 27/0207 (2013.01); H01L 29/66545 (2013.01); H10B 10/12 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, the method comprising:
forming active regions extending in a first direction on a substrate by removing a portion of the substrate;
forming a dummy active region by removing an upper portion of a first active region among the active regions;
forming a second gate separation layer on the dummy active region;
forming a sacrificial structure extending in a second direction crossing the first direction, on the active regions and the second gate separation layer;
removing a portion of the second gate separation layer from outside of the sacrificial structure;
forming source/drain regions on the active regions, at both sides of the sacrificial structure;
forming an interlayer insulating layer covering the source/drain regions;
removing the sacrificial structure and forming a gate structure in a region in which the sacrificial structure is removed;
forming an opening by removing a portion of the gate structure to expose the second gate separation layer; and
forming a first gate separation layer by filling the opening with an insulating material.