US 11,901,342 B2
Discontinuous patterned bonds for semiconductor devices and associated systems and methods
Scott D. Schellhammer, Meridian, ID (US); Vladimir Odnoblyudov, Eagle, ID (US); and Jeremy S. Frei, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jan. 7, 2022, as Appl. No. 17/570,973.
Application 14/305,387 is a division of application No. 13/220,462, filed on Aug. 29, 2011, granted, now 8,754,424, issued on Jun. 17, 2014.
Application 17/570,973 is a continuation of application No. 16/273,579, filed on Feb. 12, 2019, granted, now 11,222,874.
Application 16/273,579 is a continuation of application No. 15/159,237, filed on May 19, 2016, granted, now 10,242,970, issued on Mar. 26, 2019.
Application 15/159,237 is a continuation of application No. 14/738,663, filed on Jun. 12, 2015, granted, now 9,362,259, issued on Jun. 7, 2016.
Application 14/738,663 is a continuation of application No. 14/305,387, filed on Jun. 16, 2014, granted, now 9,059,380, issued on Jun. 16, 2015.
Prior Publication US 2022/0130807 A1, Apr. 28, 2022
Int. Cl. H01L 25/075 (2006.01); H01L 33/00 (2010.01); H01L 33/62 (2010.01); H01L 23/00 (2006.01); H01L 21/18 (2006.01); H01L 21/20 (2006.01); H01L 21/447 (2006.01); H01L 23/495 (2006.01); H01L 33/48 (2010.01)
CPC H01L 25/0753 (2013.01) [H01L 21/187 (2013.01); H01L 21/2007 (2013.01); H01L 21/447 (2013.01); H01L 23/49513 (2013.01); H01L 24/04 (2013.01); H01L 24/06 (2013.01); H01L 24/83 (2013.01); H01L 24/94 (2013.01); H01L 24/97 (2013.01); H01L 33/0066 (2013.01); H01L 33/0093 (2020.05); H01L 33/0095 (2013.01); H01L 33/486 (2013.01); H01L 33/62 (2013.01); H01L 24/32 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/83001 (2013.01); H01L 2224/83005 (2013.01); H01L 2224/8314 (2013.01); H01L 2224/83121 (2013.01); H01L 2224/83193 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12042 (2013.01)] 19 Claims
OG exemplary drawing
 
10. A semiconductor device, comprising:
a silicon substrate having a front surface and a back surface opposite the front surface, wherein the front surface includes a recess defined by a bottom surface situated between the front surface and the back surface and by sidewalls surrounding the recess;
a first layer of bonding material disposed in direct contact with a bottom surface of the recess and with the sidewalls;
a second layer of bonding material directly bonded to the first layer of bonding material and spaced laterally apart from one or more of the sidewalls; and
a solid state transducer directly bonded to the second layer of bonding material spaced laterally apart from one or more of the sidewalls.