US 11,901,334 B2
Microelectronic devices including embedded bridge interconnect structures
Shing-Yih Shih, New Taipei (TW)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Nov. 3, 2020, as Appl. No. 17/087,867.
Application 17/087,867 is a continuation of application No. 15/286,582, filed on Oct. 6, 2016, granted, now 10,833,052.
Prior Publication US 2021/0050327 A1, Feb. 18, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 25/065 (2023.01); H01L 23/00 (2006.01); H01L 21/48 (2006.01); H01L 23/538 (2006.01); H01L 23/498 (2006.01); H01L 23/14 (2006.01)
CPC H01L 25/0655 (2013.01) [H01L 21/486 (2013.01); H01L 21/4857 (2013.01); H01L 23/49827 (2013.01); H01L 23/49838 (2013.01); H01L 23/5381 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 24/16 (2013.01); H01L 23/147 (2013.01); H01L 23/49816 (2013.01); H01L 23/5384 (2013.01); H01L 23/5385 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/18 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A microelectronic device, comprising:
a molded core comprising a single layer of a single molding compound;
a first redistribution layer located directly on a first side of the molded core;
a second redistribution layer located directly on a second, opposite side of the molded core;
metal vias embedded in the molded core and extending directly between the first redistribution layer and the second redistribution layer;
a bridge interconnect structure comprising:
a third redistribution layer embedded in the molded core, portions of the single molding compound vertically intervening directly between the third redistribution layer and the first redistribution layer; and
a base structure comprising through-silicon-vias; and
at least one die mounted on the first redistribution layer, the at least one die electrically connected to the second redistribution layer through the first redistribution layer and the metal vias, and the at least one die separately electrically connected to the second redistribution layer through the first redistribution layer and the bridge interconnect structure.