US 11,901,327 B2
Wire bonding for semiconductor devices
Yang Lei, Shanghai (CN); Xiaofeng Di, Shanghai (CN); Yuyun Lou, Shanghai (CN); Zhonghua Qian, Shanghai (CN); and Junrong Yan, Shanghai (CN)
Assigned to WESTERN DIGITAL TECHNOLOGIES, INC., San Jose, CA (US)
Filed by WESTERN DIGITAL TECHNOLOGIES, INC., San Jose, CA (US)
Filed on Feb. 26, 2021, as Appl. No. 17/186,715.
Claims priority of provisional application 63/065,191, filed on Aug. 13, 2020.
Prior Publication US 2022/0052014 A1, Feb. 17, 2022
Int. Cl. H01L 23/00 (2006.01)
CPC H01L 24/48 (2013.01) [H01L 24/04 (2013.01); H01L 24/78 (2013.01); H01L 24/85 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/4805 (2013.01); H01L 2224/4807 (2013.01); H01L 2224/4845 (2013.01); H01L 2224/48451 (2013.01); H01L 2224/48453 (2013.01); H01L 2224/48463 (2013.01); H01L 2224/48482 (2013.01); H01L 2224/7895 (2013.01); H01L 2224/8503 (2013.01); H01L 2924/381 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
an integrated circuit die having a plurality of bond pads; and
a plurality of bond wires, each of the plurality of bond wires being physically connected to a respective one of the plurality of bond pads by a ball bond,
wherein a footprint of each ball bond in an area of contact between each ball bond and the respective bond pad has a shape that is non-circular and includes a first axis of symmetry,
wherein the footprint of each ball bond includes a ball bond width and a ball bond length, and
wherein each of the bond pads includes a bond pad width and a bond pad length, and wherein a ratio of the ball bond length to the ball bond width is equal to a ratio of the bond pad length to the bond pad width ±10%.