US 11,901,326 B2
Semiconductor device with branch electrode terminal and method of manufacturing semiconductor device
Shinsuke Asada, Tokyo (JP); Satoru Ishikawa, Tokyo (JP); Yuki Yano, Tokyo (JP); Shohei Ogawa, Tokyo (JP); and Kiyoshi Arai, Tokyo (JP)
Assigned to Mitsubishi Electric Corporation, Tokyo (JP)
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
Filed on Dec. 9, 2021, as Appl. No. 17/546,695.
Claims priority of application No. 2021-018759 (JP), filed on Feb. 9, 2021.
Prior Publication US 2022/0254749 A1, Aug. 11, 2022
Int. Cl. H01L 23/00 (2006.01)
CPC H01L 24/37 (2013.01) [H01L 24/35 (2013.01); H01L 24/48 (2013.01); H01L 2224/35125 (2013.01); H01L 2224/3701 (2013.01); H01L 2224/48153 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a metal pattern;
a semiconductor element bonded on the metal pattern; and
an electrode terminal extending with a width, wherein
the electrode terminal is branched into a plurality of branch portions in a width direction on one end side of an extending direction thereof,
of the plurality of branch portions, a first branch portion and a second branch portion are bonded on the metal pattern via a bonding material, respectively,
the first branch portion has a wider width in the width direction than that of the second branch portion, and
the bonding material between the second branch portion and the metal pattern is thinner than the bonding material between the first branch portion and the metal pattern.