US 11,901,322 B2
Fabrication method of semiconductor die and chip-on-plastic packaging of semiconductor die
Jin Won Jeong, Seoul (KR); Jae Sik Choi, Cheongju-si (KR); and Byeung Soo Song, Sejong-si (KR)
Assigned to MagnaChip Semiconductor, Ltd., Cheongju-si (KR)
Filed by MagnaChip Semiconductor, Ltd., Cheongju-si (KR)
Filed on May 18, 2022, as Appl. No. 17/747,124.
Application 17/747,124 is a division of application No. 16/934,338, filed on Jul. 21, 2020, granted, now 11,380,640.
Claims priority of application No. 10-2020-0033842 (KR), filed on Mar. 19, 2020.
Prior Publication US 2022/0278064 A1, Sep. 1, 2022
Int. Cl. H10K 77/10 (2023.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 21/3065 (2006.01); H01L 21/268 (2006.01); H01L 21/304 (2006.01); H01L 25/16 (2023.01); H01L 21/78 (2006.01); H10K 71/00 (2023.01)
CPC H01L 24/11 (2013.01) [H01L 21/268 (2013.01); H01L 21/3043 (2013.01); H01L 21/3065 (2013.01); H01L 21/78 (2013.01); H01L 24/03 (2013.01); H01L 24/04 (2013.01); H01L 24/13 (2013.01); H01L 24/29 (2013.01); H01L 24/81 (2013.01); H01L 24/83 (2013.01); H01L 24/91 (2013.01); H01L 25/167 (2013.01); H10K 71/00 (2023.02); H10K 77/111 (2023.02); H01L 2224/0401 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A semiconductor die, comprising:
a semiconductor substrate comprising a semiconductor die region and a seal-ring region;
an interlayer insulating film, a metal wiring, and a metal pad formed on the semiconductor substrate;
a passivation insulating film formed on the metal pad;
a metal bump connected to the metal pad;
an anisotropic conductive film (ACF) comprising conductive balls and formed on the semiconductor die; and
a flexible substrate attached to the ACF and curved toward the seal-ring region of the semiconductor die,
wherein a thickness of the interlayer insulating film disposed in the seal-ring region is smaller than a thickness of the interlayer insulating film disposed in the semiconductor die region.