US 11,901,320 B2
Contact pad for semiconductor device
Chang-Chia Huang, Hsinchu (TW); Tsung-Shu Lin, New Taipei (TW); Cheng-Chieh Hsieh, Tainan (TW); and Wei-Cheng Wu, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Dec. 12, 2022, as Appl. No. 18/064,371.
Application 15/633,414 is a division of application No. 14/475,169, filed on Sep. 2, 2014, granted, now 9,691,686, issued on Jun. 27, 2017.
Application 18/064,371 is a continuation of application No. 17/181,202, filed on Feb. 22, 2021, granted, now 11,527,502.
Application 17/181,202 is a continuation of application No. 16/653,422, filed on Oct. 15, 2019, granted, now 10,930,605, issued on Feb. 23, 2021.
Application 16/653,422 is a continuation of application No. 15/633,414, filed on Jun. 26, 2017, granted, now 10,453,813, issued on Oct. 22, 2019.
Claims priority of provisional application 62/003,979, filed on May 28, 2014.
Prior Publication US 2023/0112750 A1, Apr. 13, 2023
Int. Cl. H01L 21/76 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/488 (2006.01); H01L 21/768 (2006.01); H01L 23/31 (2006.01); H01L 21/683 (2006.01); H01L 25/10 (2006.01)
CPC H01L 24/06 (2013.01) [H01L 21/565 (2013.01); H01L 21/76885 (2013.01); H01L 23/3185 (2013.01); H01L 23/488 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/16 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 24/81 (2013.01); H01L 21/6835 (2013.01); H01L 24/11 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 24/83 (2013.01); H01L 24/92 (2013.01); H01L 25/105 (2013.01); H01L 2221/68359 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/03464 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/05015 (2013.01); H01L 2224/05024 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05139 (2013.01); H01L 2224/05144 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05164 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05181 (2013.01); H01L 2224/05555 (2013.01); H01L 2224/06131 (2013.01); H01L 2224/06179 (2013.01); H01L 2224/06515 (2013.01); H01L 2224/11334 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13116 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/18 (2013.01); H01L 2224/19 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73267 (2013.01); H01L 2224/81805 (2013.01); H01L 2224/83005 (2013.01); H01L 2224/838 (2013.01); H01L 2224/83874 (2013.01); H01L 2224/92244 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1041 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/04941 (2013.01); H01L 2924/04953 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/2064 (2013.01); H01L 2924/3512 (2013.01); H01L 2924/35121 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor device, the method comprising:
forming contact pads over a first substrate; and
forming dummy pad features over the first substrate, each of the dummy pad features being adjacent to a corresponding one of the contact pads, each of the dummy pad features being electrically disconnected from the corresponding one of the contact pads, wherein no other conductive material is interposed directly between each of the dummy pad features and the corresponding one of the contact pads.