US 11,901,305 B2
Method for fabricating semiconductor structure having alignment mark feature
Kuo-Hung Lee, Taipei (TW); Chih-Fei Lee, Tainan (TW); Fu-Cheng Chang, Tainan (TW); and Ching-Hung Kao, Tainan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD., Hsin-Chu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD., Hsin-Chu (TW)
Filed on Jun. 13, 2022, as Appl. No. 17/838,375.
Application 16/022,896 is a division of application No. 15/158,402, filed on May 18, 2016, granted, now 10,020,265, issued on Jul. 10, 2018.
Application 17/838,375 is a continuation of application No. 17/068,033, filed on Oct. 12, 2020, granted, now 11,362,039.
Application 17/068,033 is a continuation of application No. 16/022,896, filed on Jun. 29, 2018, granted, now 10,804,211, issued on Oct. 13, 2020.
Claims priority of provisional application 62/269,043, filed on Dec. 17, 2015.
Prior Publication US 2022/0310528 A1, Sep. 29, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/544 (2006.01); H01L 21/78 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 49/02 (2006.01); H01L 29/00 (2006.01); H01L 21/02 (2006.01); H10B 12/00 (2023.01); H01L 21/311 (2006.01)
CPC H01L 23/544 (2013.01) [H01L 21/78 (2013.01); H01L 23/528 (2013.01); H01L 23/5223 (2013.01); H01L 28/40 (2013.01); H01L 21/02063 (2013.01); H01L 21/31144 (2013.01); H01L 28/60 (2013.01); H01L 28/90 (2013.01); H01L 28/91 (2013.01); H01L 29/00 (2013.01); H01L 2223/5442 (2013.01); H01L 2223/5446 (2013.01); H01L 2223/54426 (2013.01); H01L 2223/54453 (2013.01); H10B 12/37 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method of fabricating a semiconductor structure, comprising:
forming an alignment mark layer over a substrate;
patterning the alignment mark layer to define a first alignment mark feature and a second alignment mark feature from the alignment mark layer; and
forming a bottom conductive layer over the first alignment mark feature and the second alignment mark feature and between the first alignment mark feature and the second alignment mark feature.