US 11,901,302 B2
InFO-POP structures with TIVs having cavities
Jing-Cheng Lin, Hsinchu (TW); Chen-Hua Yu, Hsinchu (TW); and Po-Hao Tsai, Zhongli (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jun. 28, 2021, as Appl. No. 17/360,313.
Application 17/360,313 is a continuation of application No. 16/590,908, filed on Oct. 2, 2019, granted, now 11,075,168.
Application 16/590,908 is a continuation of application No. 15/907,473, filed on Feb. 28, 2018, granted, now 10,515,901, issued on Dec. 24, 2019.
Claims priority of provisional application 62/565,489, filed on Sep. 29, 2017.
Prior Publication US 2021/0327816 A1, Oct. 21, 2021
Int. Cl. H01L 23/538 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 25/10 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01)
CPC H01L 23/5389 (2013.01) [H01L 21/486 (2013.01); H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/565 (2013.01); H01L 21/6835 (2013.01); H01L 23/3114 (2013.01); H01L 23/3121 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 25/0657 (2013.01); H01L 25/105 (2013.01); H01L 25/50 (2013.01); H01L 23/3128 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68359 (2013.01); H01L 2221/68372 (2013.01); H01L 2224/18 (2013.01); H01L 2224/214 (2013.01); H01L 2224/2919 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06568 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1058 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure comprising:
a device die;
an encapsulant encapsulating the device die therein;
a through-via penetrating through the encapsulant, wherein the through-via comprises a copper post with substantially straight edges;
a polymer extending into the encapsulant; and
a solder region over and joined to the through-via, wherein both of the polymer and the solder region extend into a recess in the copper post.