US 11,901,296 B2
Die interconnect substrate, an electrical device and a method for forming a die interconnect substrate
Robert Alan May, Chandler, AZ (US); Kristof Darmawikarta, Chandler, AZ (US); and Sri Ranga Sai Sai Boyapati, Chandler, AZ (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Dec. 27, 2022, as Appl. No. 18/089,540.
Application 18/089,540 is a continuation of application No. 17/355,301, filed on Jun. 23, 2021.
Application 17/355,301 is a continuation of application No. 16/474,585, granted, now 11,069,620, issued on Jul. 20, 2021, previously published as PCT/US2017/025232, filed on Mar. 31, 2017.
Prior Publication US 2023/0146783 A1, May 11, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/532 (2006.01); H01L 23/29 (2006.01); H01L 23/522 (2006.01); H01L 23/538 (2006.01); H01L 23/00 (2006.01); H01L 23/50 (2006.01); H01L 21/48 (2006.01)
CPC H01L 23/5329 (2013.01) [H01L 23/293 (2013.01); H01L 23/5226 (2013.01); H01L 21/4853 (2013.01); H01L 23/50 (2013.01); H01L 23/5381 (2013.01); H01L 23/5385 (2013.01); H01L 24/19 (2013.01); H01L 24/25 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A die interconnect substrate, comprising:
a bridge die having a top side above a bottom side, and a first sidewall and a second sidewall between the top side and the bottom side, the first sidewall laterally opposite the second sidewall, the bridge die having a bridge die pad;
a substrate interconnect laterally spaced apart from the first sidewall of the bridge die;
an insulating filler structure laterally between the substrate interconnect and the bridge die, the insulating filler structure in contact with the first sidewall of the bridge die;
an insulating layer on and in direct contact with the substrate interconnect, on the insulating filler structure, and on the bridge die;
a vertical wiring layer in a first opening in the insulating layer, the vertical wiring layer on the substrate interconnect;
a first lateral wiring layer on the vertical wiring layer and on the insulating layer;
a first contact interface structure on the first lateral wiring layer;
a via portion in a second opening in the insulating layer, the via portion on the bridge die pad;
a second lateral wiring layer on the via portion and on the insulating layer; and
a second contact interface structure on the second lateral wiring layer.