US 11,901,292 B2
Microelectronic devices, memory devices, and electronic systems
Shuangqiang Luo, Boise, ID (US); and Indra V. Chary, Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Aug. 11, 2022, as Appl. No. 17/819,019.
Application 17/819,019 is a continuation of application No. 16/952,913, filed on Nov. 19, 2020, granted, now 11,424,184.
Prior Publication US 2022/0384342 A1, Dec. 1, 2022
Int. Cl. H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 23/522 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01)
CPC H01L 23/5283 (2013.01) [H01L 21/31144 (2013.01); H01L 21/76804 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A microelectronic device, comprising:
a first dielectric material overlying vertically extending strings of memory cells;
a second dielectric material overlying and having a different material composition than the first dielectric material; and
conductive contact structures vertically extending through the first dielectric material and the second dielectric material, the conductive contact structures coupled to the vertically extending strings of memory cells and individually comprising:
a first portion confined within second dielectric material and having a substantially uniform horizontal cross-sectional area across a vertical height thereof; and
a second portion underlying and unitary with the first portion, the second portion vertically extending through the second dielectric material and the first dielectric material and having a non-uniform horizontal cross-sectional area across a vertical height thereof.