US 11,901,269 B2
Semiconductor package
Seongchan Park, Suwon-si (KR); Sanghyun Kwon, Suwon-si (KR); Hyungkyu Kim, Suwon-si (KR); Han Kim, Suwon-si (KR); Choonkeun Lee, Suwon-si (KR); and Seungon Kang, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Mar. 4, 2022, as Appl. No. 17/687,072.
Application 17/687,072 is a continuation of application No. 16/593,300, filed on Oct. 4, 2019, abandoned.
Claims priority of application No. 10-2018-0169578 (KR), filed on Dec. 26, 2018.
Prior Publication US 2022/0189860 A1, Jun. 16, 2022
Int. Cl. H01L 23/48 (2006.01); H01L 23/495 (2006.01); H01L 23/433 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 23/373 (2006.01); H01L 23/367 (2006.01)
CPC H01L 23/49568 (2013.01) [H01L 23/3178 (2013.01); H01L 23/367 (2013.01); H01L 23/3735 (2013.01); H01L 23/4334 (2013.01); H01L 23/49805 (2013.01); H01L 23/49827 (2013.01); H01L 2224/02371 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor package, comprising:
a semiconductor chip having an active surface, on which a connection pad is disposed, and an inactive surface opposite to the active surface;
a heat-dissipating member disposed on the inactive surface of the semiconductor chip and comprising graphite;
an encapsulant sealing at least a portion of each of the semiconductor chip and the heat-dissipating member;
a capping metal layer disposed directly between the heat-dissipating member and the encapsulant; and
a connection structure disposed on the active surface of the semiconductor chip and comprising a redistribution layer electrically connected to the connection pad,
wherein the heat-dissipating member includes holes passing through at least a portion of the heat-dissipating member, and the holes overlap the inactive surface of the semiconductor chip.