CPC H01L 23/3157 (2013.01) [H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/561 (2013.01); H01L 21/565 (2013.01); H01L 21/568 (2013.01); H01L 21/76898 (2013.01); H01L 23/3114 (2013.01); H01L 23/49816 (2013.01); H01L 23/49827 (2013.01); H01L 24/11 (2013.01); H01L 24/81 (2013.01); H01L 24/96 (2013.01); H01L 24/97 (2013.01); H01L 25/0657 (2013.01)] | 20 Claims |
1. A semiconductor structure comprises:
a substrate;
a semiconductor device bonded to an upper surface of the substrate; and
an underfill material around the semiconductor device and between the substrate and the semiconductor device, wherein a fillet of the underfill material has a first portion distal from the substrate and has a second portion between the first portion and the substrate, wherein a first sidewall of the first portion extends away from a first sidewall of the semiconductor device as the first portion extends toward the substrate, and a second sidewall of the second portion extends parallel to the first sidewall of the semiconductor device.
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