US 11,901,255 B2
Semiconductor device and method of forming the same
Chih-Chien Pan, Taipei (TW); Chin-Fu Kao, Taipei (TW); Li-Hui Cheng, New Taipei (TW); and Szu-Wei Lu, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 20, 2022, as Appl. No. 17/869,003.
Application 17/063,143 is a division of application No. 16/176,725, filed on Oct. 31, 2018, granted, now 10,796,976, issued on Oct. 6, 2020.
Application 17/869,003 is a continuation of application No. 17/063,143, filed on Oct. 5, 2020, granted, now 11,424,174.
Prior Publication US 2022/0359331 A1, Nov. 10, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/31 (2006.01); H01L 25/065 (2023.01); H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01)
CPC H01L 23/3157 (2013.01) [H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/561 (2013.01); H01L 21/565 (2013.01); H01L 21/568 (2013.01); H01L 21/76898 (2013.01); H01L 23/3114 (2013.01); H01L 23/49816 (2013.01); H01L 23/49827 (2013.01); H01L 24/11 (2013.01); H01L 24/81 (2013.01); H01L 24/96 (2013.01); H01L 24/97 (2013.01); H01L 25/0657 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure comprises:
a substrate;
a semiconductor device bonded to an upper surface of the substrate; and
an underfill material around the semiconductor device and between the substrate and the semiconductor device, wherein a fillet of the underfill material has a first portion distal from the substrate and has a second portion between the first portion and the substrate, wherein a first sidewall of the first portion extends away from a first sidewall of the semiconductor device as the first portion extends toward the substrate, and a second sidewall of the second portion extends parallel to the first sidewall of the semiconductor device.