US 11,901,250 B2
Method of manufacturing semiconductor devices and corresponding device
Pierangelo Magni, Villasanta (IT); and Michele Derai, Milan (IT)
Assigned to STMicroelectron S.r.l., Agrate Brianza (IT)
Filed by STMicroelectronics S.r.l., Agrate Brianza (IT)
Filed on Aug. 25, 2021, as Appl. No. 17/411,585.
Claims priority of application No. 102020000020566 (IT), filed on Aug. 27, 2020.
Prior Publication US 2022/0068741 A1, Mar. 3, 2022
Int. Cl. H01L 23/495 (2006.01); H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 23/18 (2006.01); H01L 23/498 (2006.01)
CPC H01L 23/3107 (2013.01) [H01L 21/561 (2013.01); H01L 23/18 (2013.01); H01L 23/49838 (2013.01)] 24 Claims
OG exemplary drawing
 
1. A method, comprising:
positioning at least one semiconductor chip at a position on a support substrate;
molding a light-permeable laser direct structuring (LDS) material onto the at least one semiconductor chip positioned on the support substrate, wherein the least one semiconductor chip is visible through the light-permeable LDS material;
directing laser beam energy to selected spatial locations of the light-permeable LDS material to structure in the light-permeable LDS material a pattern of structured formations, wherein said selected spatial locations of the light-permeable LDS material are selected in response to determining the position of the least one semiconductor chip visible through the light-permeable LDS material; and
adding electrically-conductive material to the structured formations to produce electrically-conductive formations for making electrical connection to the at least one semiconductor chip.