US 11,901,244 B2
Methods of making a radiation detector
Peiyan Cao, Shenzhen (CN); and Yurun Liu, Shenzhen (CN)
Assigned to SHENZHEN XPECTVISIONTECHNOLOGY CO., LTD., Shenzhen (CN)
Filed by SHENZHEN XPECTVISION TECHNOLOGY CO., LTD., Shenzhen (CN)
Filed on Dec. 21, 2020, as Appl. No. 17/128,952.
Application 17/128,952 is a continuation of application No. PCT/CN2018/095526, filed on Jul. 12, 2018.
Prior Publication US 2021/0126041 A1, Apr. 29, 2021
Int. Cl. H01L 21/66 (2006.01); H01L 27/146 (2006.01); G01T 1/24 (2006.01)
CPC H01L 22/22 (2013.01) [G01T 1/24 (2013.01); H01L 27/14659 (2013.01); H01L 27/14661 (2013.01); H01L 27/14689 (2013.01); H01L 27/14696 (2013.01); H01L 27/14698 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A method comprising:
attaching a wafer to a substrate, wherein the substrate comprises discrete electrodes, wherein the wafer comprises a radiation absorption layer and a plurality of electrical contacts, wherein each of the electrical contacts is connected to at least one of the discrete electrodes;
identifying a defective area of the wafer;
replacing a portion of the wafer with at least one chip configured to absorb radiation, wherein the portion comprises the defective area.