US 11,901,243 B2
Methods related to radio-frequency switching devices having improved voltage handling capability
Guillaume Alexandre Blin, Carlisle, MA (US); Aniruddha B. Joshi, Irvine, CA (US); and Christophe Masse, Andover, MA (US)
Assigned to Skyworks Solutions, Inc., Irvine, CA (US)
Filed by SKYWORKS SOLUTIONS, INC., Irvine, CA (US)
Filed on Jun. 21, 2021, as Appl. No. 17/353,325.
Application 17/353,325 is a division of application No. 14/534,146, filed on Nov. 5, 2014, granted, now 11,043,432.
Claims priority of provisional application 61/902,809, filed on Nov. 12, 2013.
Claims priority of provisional application 61/902,808, filed on Nov. 12, 2013.
Claims priority of provisional application 61/902,810, filed on Nov. 12, 2013.
Prior Publication US 2022/0013414 A1, Jan. 13, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 23/66 (2006.01); H01L 29/417 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 27/092 (2006.01)
CPC H01L 21/84 (2013.01) [H01L 23/66 (2013.01); H01L 27/1203 (2013.01); H01L 29/41733 (2013.01); H01L 23/3121 (2013.01); H01L 24/06 (2013.01); H01L 24/48 (2013.01); H01L 27/092 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/06135 (2013.01); H01L 2224/45099 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/14215 (2013.01); H01L 2924/15192 (2013.01); H01L 2924/15313 (2013.01); H01L 2924/181 (2013.01); H01L 2924/19105 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method for fabricating a radio-frequency switching device, the method comprising:
providing a semiconductor substrate;
forming a plurality of field-effect transistors on the semiconductor substrate such that the field-effect transistors have a non-uniform distribution of a parameter; and
connecting the field-effect transistors to form a stack between a first terminal and a second terminal, the field-effect transistors having a non-uniform distribution of a physical parameter of each respective field-effect transistor across the stack, the non-uniform distribution of the physical parameter corresponding to a non-uniform distribution of an electrical parameter of each respective field-effect transistor across the stack, the non-uniform distribution of the electrical parameter configured to provide a first voltage handling capacity greater than a second voltage handling capacity corresponding to a uniform distribution of the electrical parameter, the non-uniform distribution of the physical parameter of each respective field-effect transistor including a plurality of groups of physical parameter values, each group including a plurality of adjacent field-effect transistors having the same value of the physical parameter, the plurality of groups including a first end group connected to the first terminal and a second end group connected to the second terminal, the non-uniform distribution of the physical parameter including a distribution of physical parameter values that decreases from the physical parameter value of the first group to a minimum physical parameter value corresponding to a group between the first end group and the second end group, the minimum physical parameter value less than the physical parameter value of the second end group, the physical parameter value of the first end group greater than or equal to the physical parameter value of the second end group.