US 11,901,227 B2
Feature fill with nucleation inhibition
Anand Chandrashekar, Fremont, CA (US); Esther Jeng, Los Altos, CA (US); Raashina Humayun, Los Altos, CA (US); Michal Danek, Cupertino, CA (US); Juwen Gao, San Jose, CA (US); and Deqi Wang, San Jose, CA (US)
Assigned to Lam Research Corporation, Fremont, CA (US)
Filed by Lam Research Corporation, Fremont, CA (US)
Filed on Oct. 8, 2021, as Appl. No. 17/497,702.
Application 15/991,413 is a division of application No. 14/866,621, filed on Sep. 25, 2015, granted, now 9,997,405, issued on Jun. 12, 2018.
Application 17/497,702 is a continuation of application No. 16/793,464, filed on Feb. 18, 2020, abandoned.
Application 16/793,464 is a continuation of application No. 15/991,413, filed on May 29, 2018, granted, now 10,580,695, issued on Mar. 3, 2020.
Claims priority of provisional application 62/058,058, filed on Sep. 30, 2014.
Prior Publication US 2022/0102208 A1, Mar. 31, 2022
Int. Cl. H01L 29/768 (2006.01); H01L 21/768 (2006.01); H01L 21/285 (2006.01); H01L 21/321 (2006.01); H01L 21/324 (2006.01); C23C 16/04 (2006.01); C23C 16/50 (2006.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); C23C 16/00 (2006.01)
CPC H01L 21/76879 (2013.01) [C23C 16/00 (2013.01); C23C 16/045 (2013.01); C23C 16/50 (2013.01); H01L 21/28556 (2013.01); H01L 21/321 (2013.01); H01L 21/324 (2013.01); H01L 21/76856 (2013.01); H01L 21/76861 (2013.01); H01L 21/76876 (2013.01); H01L 21/76898 (2013.01); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H01L 2924/0002 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method comprising:
providing a 3-D structure of a partially manufactured semiconductor substrate, the 3-D structure comprising sidewalls, a plurality of openings in the sidewalls leading to a plurality of features having a plurality of interior regions fluidically accessible through the openings, the plurality of interior regions comprising a tungsten layer deposited on a tungsten nucleation layer;
exposing the tungsten layer of the 3-D structure to diborane; and
after exposing the 3-D structure to diborane, exposing the 3-D structure to an inhibition chemistry to inhibit metal deposition on the tungsten layer.