US 11,901,226 B2
Method for forming an interconnect structure
Wen-Kuei Liu, Xinpu Township (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jun. 16, 2021, as Appl. No. 17/349,063.
Application 17/349,063 is a continuation of application No. 16/438,875, filed on Jun. 12, 2019, granted, now 11,069,570.
Claims priority of provisional application 62/753,805, filed on Oct. 31, 2018.
Prior Publication US 2021/0313227 A1, Oct. 7, 2021
Int. Cl. H01L 21/768 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01)
CPC H01L 21/76877 (2013.01) [H01L 21/3081 (2013.01); H01L 21/31138 (2013.01); H01L 21/7684 (2013.01); H01L 21/76802 (2013.01); H01L 21/76846 (2013.01); H01L 21/76847 (2013.01); H01L 21/76873 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a photoresist comprising a bottom anti-reflective coating (BARC) material by introducing a conductive material into a photoresist polymer;
depositing, on a semiconductor substrate, the photoresist comprising the BARC material to form a photoresist layer;
forming an opening in the photoresist layer and a portion of the semiconductor substrate;
depositing a conductive material in the opening and over the photoresist layer; and
planarizing the conductive material and the semiconductor substrate.