CPC H01L 21/76814 (2013.01) [H01L 21/76224 (2013.01); H01L 21/76877 (2013.01); H01L 21/823431 (2013.01); H01L 21/823475 (2013.01)] | 20 Claims |
1. A method, comprising:
forming an interconnect structure over a substrate, comprising:
forming a dielectric layer; then
performing an annealing process; then
forming one or more openings in the dielectric layer; then
performing a first ultraviolet (UV) curing process; then
forming conductive features in the one or more openings; then
forming a cap layer on the conductive feature, wherein the cap layer comprises a metal and is formed by a plasma enhanced chemical vapor deposition process; and then
performing a second UV curing process after forming the cap layer.
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