US 11,901,190 B2
Method of patterning
Chin-Yuan Tseng, Hsinchu (TW); Yu-Tien Shen, Tainan (TW); Wei-Liang Lin, Hsin-Chu (TW); Chih-Ming Lai, Hsinchu (TW); Kuo-Cheng Ching, Hsinchu County (TW); Shi Ning Ju, Hsinchu (TW); Li-Te Lin, Hsinchu (TW); and Ru-Gun Liu, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinhcu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Apr. 30, 2018, as Appl. No. 15/967,100.
Claims priority of provisional application 62/595,365, filed on Dec. 6, 2017.
Claims priority of provisional application 62/593,089, filed on Nov. 30, 2017.
Prior Publication US 2019/0164772 A1, May 30, 2019
Int. Cl. H01L 21/311 (2006.01); H01L 21/32 (2006.01); H01L 23/528 (2006.01); H01L 21/3213 (2006.01)
CPC H01L 21/31105 (2013.01) [H01L 21/32 (2013.01); H01L 21/32139 (2013.01); H01L 23/528 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method of patterning, the method comprising:
forming a first mask layer on a substrate having two or more materials to be provided with a prescribed pattern having one or more first edges in a first direction and one or more second edges in a second direction, the second direction being arranged at a non-zero angle to the first direction;
forming a first pattern over the first mask layer;
removing a portion of the first mask layer using the first pattern to form the one or more first edges of the prescribed pattern on the substrate to form a first patterned mask;
forming a second mask layer on the first mask layer;
forming a second pattern over the second mask layer;
removing a portion of the second mask layer using the second pattern to form the one or more second edges of the prescribed pattern on the substrate to form a second patterned mask over the substrate to expose portions of the substrate, wherein at least a portion of the second pattern overlaps the first pattern such that at least one of the first edges intersects with at least one of the second edges to form a first corner of the prescribed pattern;
prior to forming the second pattern, etching a first of the two or more materials of the portion of the substrate exposed by the first pattern; and
etching the substrate exposed through the first patterned mask and etching the substrate exposed through the second patterned mask to form the prescribed pattern in the substrate.