US 11,901,182 B2
Silicide film nucleation
Xuebin Li, Sunnyvale, CA (US); Errol Antonio C. Sanchez, Tracy, CA (US); and Patricia M. Liu, Saratoga, CA (US)
Assigned to APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jun. 30, 2021, as Appl. No. 17/363,810.
Application 17/363,810 is a division of application No. 16/400,260, filed on May 1, 2019, granted, now 11,081,358.
Claims priority of provisional application 62/694,294, filed on Jul. 5, 2018.
Prior Publication US 2022/0033970 A1, Feb. 3, 2022
Int. Cl. H01L 21/285 (2006.01); H01L 21/67 (2006.01); H01L 21/677 (2006.01); H01L 21/768 (2006.01)
CPC H01L 21/28518 (2013.01) [H01L 21/67213 (2013.01); H01L 21/67739 (2013.01); H01L 21/76876 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A system for fabricating a metal oxide semiconductor field effect transistor (MOSFET) device, comprising:
a transfer chamber defining a transfer space;
an n-type metal oxide semiconductor (NMOS) chamber, a p-type metal oxide semiconductor (PMOS) chamber, a pre-clean chamber, a metal-silicide deposition chamber, and a plasma chamber, wherein each of the NMOS chamber, the PMOS chamber, the pre-clean chamber, the metal-silicide deposition chamber, and the plasma chamber is coupled to the transfer chamber, and the NMOS and PMOS chambers are each source-drain epitaxy chambers;
a transfer robot in the transfer space configured to access the transfer chamber, the NMOS chamber, the PMOS chamber, the pre-clean chamber, the metal-silicide deposition chamber, and the plasma chamber; and
a controller comprising instructions for device fabrication, wherein, when executed by a processor, the instructions cause the system to:
retrieve a substrate from the transfer chamber;
dispose the substrate in the NMOS chamber, the PMOS chamber, or the plasma chamber;
perform at least one pre-silicide treatment on the substrate to increase a concentration of a dopant within the substrate or to increase a surface roughness of the substrate, the at least one pre-silicide treatment comprising soaking the substrate in one or more precursor sources;
transfer the substrate into the metal-silicide deposition chamber; and
subsequently, form, by deposition, a metal-silicide on the substrate in the metal-silicide deposition chamber.