US 11,901,178 B2
Quantum dots and production method thereof
Tae Gon Kim, Hwaseong-si (KR); Nuri Oh, Philadelphia, PA (US); Tianshuo Zhao, Philadelphia, PA (US); Cherie Kagan, Philadelphia, PA (US); Eun Joo Jang, Suwon-si (KR); and Christopher Murray, Philadelphia, PA (US)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do (KR); and THE TRUSTEES OF THE UNIVERSITY OF PENNSYLVANIA, Philadelphia, PA (US)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR); and THE TRUSTEES OF THE UNIVERSITY OF PENNSYLVANIA, Philadelphia, PA (US)
Filed on Mar. 1, 2021, as Appl. No. 17/187,930.
Application 17/187,930 is a division of application No. 16/441,574, filed on Jun. 14, 2019, granted, now 10,950,427.
Claims priority of provisional application 62/687,765, filed on Jun. 20, 2018.
Claims priority of provisional application 62/684,912, filed on Jun. 14, 2018.
Prior Publication US 2021/0225641 A1, Jul. 22, 2021
Int. Cl. H01L 21/02 (2006.01); H01L 29/12 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01)
CPC H01L 21/02205 (2013.01) [H01L 29/127 (2013.01); H01L 29/66439 (2013.01); H01L 29/66977 (2013.01); H01L 29/775 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A plurality of quantum dots comprising a Group IIIA-VA compound and not comprising cadmium,
wherein
the Group IIIA-VA compound comprises
a Group IIIA metal comprising indium and optionally gallium, aluminum, or a combination thereof; and
a Group VA element comprising phosphorus, antimony, arsenic, bismuth, or a combination thereof, and
a molar ratio of the Group VA element with respect to the Group IIIA metal is greater than or equal to about 1.15 as determined by an inductively coupled plasma spectroscopic analysis.