US 11,901,175 B2
Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer
Eric James Shero, Phoenix, AZ (US); Paul Ma, Scottsdale, AZ (US); Bed Prasad Sharma, Gilbert, AZ (US); and Shankar Swaminathan, Phoenix, AZ (US)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Jul. 7, 2022, as Appl. No. 17/859,929.
Application 17/859,929 is a continuation of application No. 16/801,910, filed on Feb. 26, 2020, granted, now 11,424,119.
Claims priority of provisional application 62/815,820, filed on Mar. 8, 2019.
Prior Publication US 2022/0351958 A1, Nov. 3, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/02 (2006.01); C23C 16/24 (2006.01); H01J 37/32 (2006.01); H01L 21/768 (2006.01); C23C 16/455 (2006.01); C23C 16/34 (2006.01); H01L 21/687 (2006.01); H01L 21/67 (2006.01)
CPC H01L 21/0217 (2013.01) [C23C 16/345 (2013.01); C23C 16/45536 (2013.01); C23C 16/45553 (2013.01); H01J 37/32724 (2013.01); H01L 21/0228 (2013.01); H01L 21/0234 (2013.01); H01L 21/02315 (2013.01); H01L 21/68714 (2013.01); H01L 21/76897 (2013.01); H01J 37/32899 (2013.01); H01J 2237/3321 (2013.01); H01L 21/02208 (2013.01); H01L 21/67184 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A structure, comprising:
a substrate comprising an outer surface;
a first material disposed on the outer surface of the substrate comprising titanium oxide;
a second material disposed on the outer surface of the substrate comprising at least one of a Group IV nitride or a metal nitride; and
a silicon nitride layer selectively disposed on the second material relative to the first material.