US 11,900,997 B2
Data storage based on data polarity
John F. Schreck, Lucas, TX (US); and George B. Raad, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jul. 12, 2022, as Appl. No. 17/863,307.
Application 17/863,307 is a continuation of application No. 17/071,742, filed on Oct. 15, 2020, granted, now 11,404,116.
Application 17/071,742 is a continuation of application No. 16/459,462, filed on Jul. 1, 2019, granted, now 10,832,768, issued on Nov. 10, 2020.
Claims priority of provisional application 62/693,786, filed on Jul. 3, 2018.
Prior Publication US 2023/0005531 A1, Jan. 5, 2023
Int. Cl. G11C 13/00 (2006.01); G11C 11/56 (2006.01); G11C 29/42 (2006.01); G06F 3/06 (2006.01); G06F 13/16 (2006.01)
CPC G11C 11/5642 (2013.01) [G06F 3/0616 (2013.01); G06F 3/0653 (2013.01); G06F 3/0674 (2013.01); G06F 13/1668 (2013.01); G11C 29/42 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
identifying one or more storage state criteria indicating a characteristic of memory cells associated with a memory device;
generating a transformed data word from a first data word that comprises information to be stored in the memory device, wherein the transformed data word is generated based at least in part on the first data word satisfying a first storage state criterion of the one or more storage state criteria; and
transmitting a first signal indicating the transformed data word to the memory device.