US 11,900,992 B2
Reference voltage adjustment for word line groups
Tao Jiang, Shanghai (CN); Bo Zhou, Shanghai (CN); and Guang Hu, Mountain View, CA (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Feb. 3, 2022, as Appl. No. 17/649,885.
Prior Publication US 2023/0245695 A1, Aug. 3, 2023
Int. Cl. G11C 16/04 (2006.01); G11C 11/4099 (2006.01); G11C 11/4074 (2006.01); G11C 11/4096 (2006.01); G11C 11/4076 (2006.01); G11C 11/408 (2006.01)
CPC G11C 11/4099 (2013.01) [G11C 11/4074 (2013.01); G11C 11/4076 (2013.01); G11C 11/4085 (2013.01); G11C 11/4096 (2013.01)] 25 Claims
OG exemplary drawing
 
1. An apparatus, comprising:
a controller associated with a memory device, wherein the controller is configured to cause the apparatus to:
write, at a first time, data to at least one memory cell of a first plurality of memory cells, wherein the first plurality of memory cells is coupled with a first word line that is associated with a block of memory cells;
initiate, at a second time after the first time, a read operation to read the data based at least in part on writing the data;
determine a duration between the first time and the second time based at least in part on initiating the read operation;
adjust a first plurality of reference voltage values of a first plurality of reference voltages associated with the first word line associated with the block that stores the data and a second plurality of reference voltage values of a second plurality of reference voltages associated with a second word line associated with the block that stores the data based at least in part on determining the duration between the first time and the second time, wherein the first plurality of reference voltage values are different than the second plurality of reference voltage values; and
read the data from the at least one memory cell associated with the first word line based at least in part on adjusting the first plurality of reference voltage values and the second plurality of reference voltage values.