US 11,900,040 B2
Method and system for reducing layout distortion due to exposure non-uniformity
Chi-Ta Lu, Yilan County (TW); Chia-Hui Liao, Hsinchu (TW); Yihung Lin, Hsinchu County (TW); and Chi-Ming Tsai, Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Apr. 14, 2022, as Appl. No. 17/720,301.
Application 17/720,301 is a continuation of application No. 16/937,398, filed on Jul. 23, 2020, granted, now 11,308,254.
Claims priority of provisional application 62/894,466, filed on Aug. 30, 2019.
Prior Publication US 2022/0237361 A1, Jul. 28, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G06F 30/392 (2020.01); G06F 30/398 (2020.01); G06F 111/20 (2020.01)
CPC G06F 30/392 (2020.01) [G06F 30/398 (2020.01); G06F 2111/20 (2020.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
receiving a design layout comprising a feature extending in a peripheral region and a central region of the design layout;
determining compensation values associated with a pellicle assembly and the peripheral region according to an exposure distribution in an exposure field of a workpiece;
adjusting the design layout by modifying a shape of the feature according to the compensation values; and
manufacturing a mask according to the design layout,
wherein the modifying of the shape of the feature according to the compensation values comprises:
partitioning the peripheral region into compensation zones, wherein the feature comprises first portions disposed within the respective compensation zones and a second portion disposed within the central region; and
reducing line widths of the first portions of the feature according to the compensation values associated with the respective compensation zones while keep the second portion of the feature uncompensated.