US 11,899,958 B2
Method for discarding personal information in NAND flash memory
Dong Hoon Lee, Seoul (KR); and Na Young Ahn, Seoul (KR)
Assigned to Korea University Research and Business Foundation, Seoul (KR)
Appl. No. 17/783,792
Filed by KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION, Seoul (KR)
PCT Filed Dec. 9, 2020, PCT No. PCT/KR2020/017965
§ 371(c)(1), (2) Date Jun. 9, 2022,
PCT Pub. No. WO2021/118232, PCT Pub. Date Jun. 17, 2021.
Claims priority of application No. 10-2019-0162829 (KR), filed on Dec. 9, 2019; and application No. 10-2020-0170824 (KR), filed on Dec. 8, 2020.
Prior Publication US 2023/0013310 A1, Jan. 19, 2023
Int. Cl. G06F 12/00 (2006.01); G06F 3/06 (2006.01)
CPC G06F 3/0652 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0679 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of destroying personal information of a non-volatile memory device including a plurality of memory blocks including a plurality of cell strings that includes at least one string selection transistor each connected between a bitline and a common source line, a plurality of memory cells corresponding to the respective wordlines, and at least one ground selection transistor, the method comprising:
identifying at least one memory block that includes an invalid page in which personal information is stored from among the plurality of memory blocks in response to a personal information destruction request; and
deleting the personal information by applying at least one deletion duty pulse (DDP) to a wordline corresponding to the invalid page,
wherein a number of the at least one DDP is determined to exceed an error correction level of an error correction code (ECC).