CPC G06F 21/755 (2017.08) [G11C 11/412 (2013.01); G11C 11/418 (2013.01); G11C 11/419 (2013.01); H03K 19/00315 (2013.01); H04L 9/002 (2013.01); H04L 9/3278 (2013.01)] | 20 Claims |
18. A method, comprising:
monitoring voltage changes of a supply voltage of a memory cell array, wherein the memory cell array comprises a plurality of bit cells whose stable logical states upon a power-up of the memory cell array are used to generate a physical unclonable function (PUF) signature;
detecting a voltage tempering event of the supply voltage; and
setting each of the plurality of bit cells to its initial logical state based on the voltage tempering event.
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