US 11,899,377 B2
System and method for thermal management of reticle in semiconductor manufacturing
Yueh-Lin Yang, Tainan (TW); and Chi-Hung Liao, New Taipei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Feb. 7, 2022, as Appl. No. 17/665,605.
Application 17/665,605 is a continuation of application No. 16/845,077, filed on Apr. 10, 2020, granted, now 11,243,478.
Claims priority of provisional application 62/880,665, filed on Jul. 31, 2019.
Prior Publication US 2022/0155697 A1, May 19, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 7/00 (2006.01)
CPC G03F 7/70875 (2013.01) [G03F 7/70633 (2013.01); G03F 7/70891 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
receiving a semiconductor workpiece to a process chamber;
forming a photo-sensitive layer on the semiconductor workpiece;
selecting a target state of a reticle based on a given data set, wherein the given data set comprises temperature profiles of the reticle correlated to a target overlay performance, and the target state is a saturation state in which a deformation of the reticle is substantially unchanged;
exposing the semiconductor workpiece by regulating the reticle to reach the target state; and
developing and etching the semiconductor workpiece to form designated patterns on the semiconductor workpiece.