US 11,899,334 B2
Silicon photonics-based optical modulator
Sanghwa Yoo, Daejeon (KR); Sooyeon Kim, Daejeon (KR); Heuk Park, Daejeon (KR); Jyung Chan Lee, Daejeon (KR); and Joon Ki Lee, Daejeon (KR)
Assigned to ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE, Daejeon (KR)
Filed by ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE, Daejeon (KR)
Filed on Dec. 8, 2021, as Appl. No. 17/545,063.
Claims priority of application No. 10-2021-0112543 (KR), filed on Aug. 25, 2021.
Prior Publication US 2023/0068004 A1, Mar. 2, 2023
Int. Cl. G02F 1/225 (2006.01); G02F 1/01 (2006.01)
CPC G02F 1/2257 (2013.01) [G02F 1/0123 (2013.01); G02F 2202/105 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A silicon photonics-based optical modulator comprising:
first radio frequency (RF) metal electrodes that operate as grounds;
phase shifters disposed between the first RF metal electrodes and optically modulating optical signals transmitted along optical waveguides;
second RF metal electrodes disposed between the phase shifters, receiving RF electrical signals through one ends thereof from a driving driver located outside of the optical modulator, and providing the RF electrical signals to the phase shifters;
resistor-inductors (RLs) connected at one ends thereof to other ends of the second RF metal electrodes;
an inductive line disposed between a junction point of other ends of the RLs and a power supply for applying a bias voltage to the optical modulator and the driving driver; and
a silicon capacitor disposed between the junction point of the other ends of the RLs and the power supply and preventing a degradation of an RF response characteristic of the optical modulator caused by the inductive line.